17 February 2009 Self-assembled InGaAs/GaAs quantum dot microtube coherent light sources on GaAs and silicon
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Abstract
We have investigated the fabrication and emission characteristics of InGaAs/GaAs quantum dot microtubebased coherent light sources on GaAs and Si, which are formed by self-rolling of pseudomorphically strained semiconductor bilayers through controlled release from the substrate. Tailoring of the optical modes is achieved by engineering the shape of the microtube ring resonators. Using substrate-to-substrate transfer method, we have also achieved, for the first time, three-dimensionally confined quantum dot microtube optical ring resonators on Si, that are relatively free of dislocations. Sharp polarized and regularly spaced optical modes, with an intrinsic Q-factor of ~ 3,000, were measured at 77 K.
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Z. Mi, Z. Mi, S. Vicknesh, S. Vicknesh, F. Li, F. Li, P. Bhattacharya, P. Bhattacharya, } "Self-assembled InGaAs/GaAs quantum dot microtube coherent light sources on GaAs and silicon", Proc. SPIE 7220, Silicon Photonics IV, 72200S (17 February 2009); doi: 10.1117/12.810117; https://doi.org/10.1117/12.810117
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