Infrared focal plane arrays based on dots in a well and strained layer superlattices

Sanjay Krishna

doi:10.1117/12.810534

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26 January 2009 Infrared focal plane arrays based on dots in a well and strained layer superlattices

Sanjay Krishna

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Proceedings Volume 7222, Quantum Sensing and Nanophotonic Devices VI; 72220P (2009) https://doi.org/10.1117/12.810534
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

In this paper, we will review some of the recent progress that we have made on developing single pixel detectors and focal plane arrays based on dots-in-a-well (DWELL) heterostructure and Type II strained layer superlattice (SLS). The DWELL detector consists of an active region composed of InAs quantum dots embedded in InGaAs/GaAs quantum wells. By varying the thickness of the InGaAs well, the DWELL heterostructure allows for the manipulation of the operating wavelength and the nature of the transitions (bound-to-bound, bound-to-quasibound and bound-to-continuum) of the detector. Based on these principles, DWELL samples were grown using molecular beam epitaxy and fabricated into 320 x 256 focal plane arrays (FPAs) with Indium bumps using standard lithography at the University of New Mexico. The FPA evaluated was hybridized to an Indigo 9705 readout integrated circuit (ROIC). From this evaluation, we have reported the first two-color, co-located quantum dot based imaging system that can be used to take multicolor images using a single FPA. We have also been investigating the use of miniband transitions in Type II SLS to develop infrared detectors using PIN and nBn based designs.

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Sanjay Krishna "Infrared focal plane arrays based on dots in a well and strained layer superlattices", Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72220P (26 January 2009); https://doi.org/10.1117/12.810534

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