Theory and modeling of type-II strained-layer superlattice detectors

Michael E. Flatté; Christoph H. Grein

doi:10.1117/12.814173

26 January 2009 Theory and modeling of type-II strained-layer superlattice detectors

Proceedings Volume 7222, Quantum Sensing and Nanophotonic Devices VI; 72220Q (2009) https://doi.org/10.1117/12.814173
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Type II strained-layer superlattices promise superior performance as detectors in the LWIR and VLWIR wavelength regimes due to their potential for suppressing Auger recombination (and thus dark currents). These predictions for lower Auger rates have been verified experimentally, however the Shockley-Read-Hall recombination times remain shorter than for competing materials. Recent advances in understanding the interaction of defect/donor states with interfaces in strained materials indicates that in these short-period superlattices the behavior of defects and donors can be very different from in the bulk. The current understanding of these issues will be reviewed.

Citation Download Citation

Michael E. Flatté and Christoph H. Grein "Theory and modeling of type-II strained-layer superlattice detectors", Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72220Q (26 January 2009); https://doi.org/10.1117/12.814173

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