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26 January 2009 Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs/GaSb superlattices
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Abstract
Recent advances in the design and fabrication of Type-II InAs/GaSb superlattices allowed the realization of high performance long wavelength infrared focal plane arrays. The introduction of an Mstructure barrier between the n-type contact and the π active region reduced the tunneling component of the dark current. The M-structure design improved the noise performance and the dynamic range of FPAs at low temperatures. At 81K, the NEDT of the focal plane array was 23 mK. The noise of the camera was dominated by the noise component due to the read out integrated circuit. At 8 μm, the median quantum efficiency of the detectors was 71%, mainly limited by the reflections on the backside of the array.
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Pierre-Yves Delaunay, Binh Minh Nguyen, Darin Hoffman, Edward Kwei-wei Huang, Paritosh Manurkar, Simeon Bogdanov, and Manijeh Razeghi "Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs/GaSb superlattices", Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72220W (26 January 2009); doi: 10.1117/12.810032; https://doi.org/10.1117/12.810032
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