26 January 2009 Designing phonons for active use in terahertz devices
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Abstract
Semiconductor nanostructures, such as quantum wells and quantum dots, are well known, and some have been incorporated in applications. Here we propose a new general approach to make use of polar optical phonons in quantum wells for terahertz (THz) devices. As the first example, we show the coupling of phonon and intersubband transition leading to Fano resonance in photocurrent spectra. We investigate the phenomenon experimentally in specially designed GaAs/AlGaAs quantum well infrared photodetectors. Finally, we discuss the future research and potentials.
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H. C. Liu, H. C. Liu, C. Y. Song, C. Y. Song, Z. R Wasilewski, Z. R Wasilewski, J. A. Gupta, J. A. Gupta, M. Buchanan, M. Buchanan, } "Designing phonons for active use in terahertz devices", Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72220X (26 January 2009); doi: 10.1117/12.807532; https://doi.org/10.1117/12.807532
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