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26 January 2009 Single photon sources using InAs/InP quantum dots
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Single photon sources are of extreme interest for future quantum communications networks. Several realizations of such sources where proposed but none of them corresponds to the needs of a quantum network, in terms of emission wavelength, repetition rate or quantum state purity. Using self organized InAs/InP quantum dots, it is possible to tune the emission wavelength up to 1.55 μm. Lifetime measurements confirm the high optical quality of these dots opening the possibility to engineer sources operate above 77K. With this material combination it is also possible to localized the growth of a single quantum dot, that can be to deterministically coupled to a photonic crystal cavity.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Hostein, N. Gogneau, A. Michon, L. Le Gratiet, E. Cambril, G. Beaudoin, G. Patriarche, I. Robert-Phillip, J. Y. Marzin, A. Beveratos, and I. Sagnes "Single photon sources using InAs/InP quantum dots", Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72221I (26 January 2009);

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