Quantum well design and diffraction efficiency of quantum well light emitting diode

Milad Khoshnegar; Amin Eftekharian; Majid Sodagar; Sina Khorasani; Ali Adibi

doi:10.1117/12.809480

16 February 2009 Quantum well design and diffraction efficiency of quantum well light emitting diode

Milad Khoshnegar; Amin Eftekharian; Majid Sodagar; Sina Khorasani; Ali Adibi

Author Affiliations +

Proceedings Volume 7223, Photonic and Phononic Crystal Materials and Devices IX; 722311 (2009) https://doi.org/10.1117/12.809480
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

In this work, a GaN-based quantum well LED is theoretically analyzed in a multi-layer structure composed of a quantum well embedded in a waveguide core surrounded by photonic crystal slab and a sapphire substrate. The electromagnetic eigenmodes are obtained throughout above structure via revised plane wave-scattering matrix method. The omnidirectional transmission and reflection are investigated for both TE and TM polarizations from diffraction channels in Ewald construction. Then, we introduced angular power density and calculated radiative modes extraction efficiency. All structural parameters, such as lattice geometry, lattice constant, photonic crystal thickness and filling factor, are taken into account. We also investigated the coupling efficiency between waveguide modes and Bloch modes in structure which include decomposed emission and extraction regions. In order to design a quantum well white LED, we used a MQW with adjusted material composition. The photoluminescence spectrum for both TE and TM polarizations is obtained through a combination of k.p perturbation and transfer matrix method.

Citation Download Citation

Milad Khoshnegar, Milad Khoshnegar, Amin Eftekharian, Amin Eftekharian, Majid Sodagar, Majid Sodagar, Sina Khorasani, Sina Khorasani, Ali Adibi, Ali Adibi, } "Quantum well design and diffraction efficiency of quantum well light emitting diode", Proc. SPIE 7223, Photonic and Phononic Crystal Materials and Devices IX, 722311 (16 February 2009); doi: 10.1117/12.809480; https://doi.org/10.1117/12.809480

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