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16 February 2009 Midinfrared (λ = 3.6 μm) LEDs and arrays based on InGaAsSb with photonic crystals
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InGaAsSb narrow gap heterostructures with p-InAsSbP claddings grown onto heavily doped n+-InAs substrates have been processed into 70 μm wide square mesas lined in a 1x4 array with individual addressing of elements. We report I-V, L-I characteristics of the array as well as IR images allowing characterization of cross talk, reflectance of the contacts and apparent temperatures in the spectral range around 3.6 μm. Reflectance and outcoupling efficiency is presented for photonics crystal structures with regard to their implementation in LED assemblies.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. A. Matveev, Yu. M. Zadiranov, A. L. Zakgeim, N. V. Zotova, N. D. Il'inskaya, S. A. Karandashev, M. A. Remennyy, N. M. Stus', A. A. Usikova, O. A. Usov, and A. E. Cherniakov "Midinfrared (λ = 3.6 μm) LEDs and arrays based on InGaAsSb with photonic crystals", Proc. SPIE 7223, Photonic and Phononic Crystal Materials and Devices IX, 72231B (16 February 2009);


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