Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate

B. L. Liang; P. S. Wong; B. V. G. Dorogan; J. Tatebayashi; A. R. Albrecht; H. Xiang; Yu. I. Mazur; G. J. Salamo; S. R. J. Brueck; D. L. Huffaker

doi:10.1117/12.809784

17 February 2009 Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate

B. L. Liang, P. S. Wong, B. V. G. Dorogan, J. Tatebayashi, A. R. Albrecht, H. Xiang, Yu. I. Mazur, G. J. Salamo, S. R. J. Brueck, D. L. Huffaker

Author Affiliations +

Proceedings Volume 7224, Quantum Dots, Particles, and Nanoclusters VI; 722409 (2009) https://doi.org/10.1117/12.809784
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

InAs quantum dots embedded in InGaAs quantum well (DWELL) structures grown by metal-organic chemical-vapor deposition on nano-patterned GaAs pyramids and planar GaAs (001) substrate are comparatively investigated. Photoluminescence (PL), PL excitation, and time-resolved PL measurements demonstrate that the DWELL grown on the GaAs pyramids has a broad QW PL band (FWHM ~ 90 meV) and a better QD emission efficiency than the DWELL structure grown on the planar GaAs (001) substrate. These properties are attributed to the InGaAs QW with distributed thickness profile on the faceted GaAs pyramid, which introduces tapered energy band structure and assists the carrier capture into the QDs. This research provides useful data for further improving the performance of DWELL structures for device applications.

Citation Download Citation

B. L. Liang, P. S. Wong, B. V. G. Dorogan, J. Tatebayashi, A. R. Albrecht, H. Xiang, Yu. I. Mazur, G. J. Salamo, S. R. J. Brueck, and D. L. Huffaker "Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate", Proc. SPIE 7224, Quantum Dots, Particles, and Nanoclusters VI, 722409 (17 February 2009); https://doi.org/10.1117/12.809784

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