17 February 2009 Electrical and optical characterization of individual GaSb nanowires
Author Affiliations +
Abstract
Single GaSb Nanowire Field Effect Transistors (NWFETs) were fabricated and their electrical transport measurements were conducted at the temperatures ranging from 298 K to 503 K. The current on/off ratios as large as 3 orders of magnitude were observed. The Raman spectra and EDAX were performed on single wires to verify the GaSb property before and after the transport study. The temperature dependent current-voltage characteristic shows asymmetric current through the device due to asymmetric back-to-back Schottky contacts at the two ends of the wire. Arrhenius plots revealed effective Schottky barrier heights around ØBeff =0.53eV. Measurement conducted on back-gated nanowire transistors shows the polarity of nanowire to be n-type.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Xu, Alan Chin, Laura Ye, Cun-Zheng Ning, Hongbin Yu, "Electrical and optical characterization of individual GaSb nanowires", Proc. SPIE 7224, Quantum Dots, Particles, and Nanoclusters VI, 72240G (17 February 2009); doi: 10.1117/12.816931; https://doi.org/10.1117/12.816931
PROCEEDINGS
7 PAGES


SHARE
Back to Top