17 February 2009 Electrical and optical characterization of individual GaSb nanowires
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Single GaSb Nanowire Field Effect Transistors (NWFETs) were fabricated and their electrical transport measurements were conducted at the temperatures ranging from 298 K to 503 K. The current on/off ratios as large as 3 orders of magnitude were observed. The Raman spectra and EDAX were performed on single wires to verify the GaSb property before and after the transport study. The temperature dependent current-voltage characteristic shows asymmetric current through the device due to asymmetric back-to-back Schottky contacts at the two ends of the wire. Arrhenius plots revealed effective Schottky barrier heights around ØBeff =0.53eV. Measurement conducted on back-gated nanowire transistors shows the polarity of nanowire to be n-type.
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Wei Xu, Wei Xu, Alan Chin, Alan Chin, Laura Ye, Laura Ye, Cun-Zheng Ning, Cun-Zheng Ning, Hongbin Yu, Hongbin Yu, } "Electrical and optical characterization of individual GaSb nanowires", Proc. SPIE 7224, Quantum Dots, Particles, and Nanoclusters VI, 72240G (17 February 2009); doi: 10.1117/12.816931; https://doi.org/10.1117/12.816931


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