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9 February 2009 Anti-Stokes photoluminescence in GaN single crystals and heterostructures
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Abstract
We review some of our recent results following the investigation of anti-Stokes photoluminescence (PL). Indeed, we have observed anti-Stokes photoluminescence from n-type free-standing GaN at room temperature. Such a process is induced by phonon-assisted absorption. When the excitation photon energy is sufficiently below the donor-acceptor transition energy, however, two-photon absorption becomes the dominant mechanism for anti-Stokes photoluminescence. By measuring the dependences of the photoluminescence spectra on temperature, excitation power, and excitation photon energy, we have demonstrated that donor-acceptor pair transition plays an important role in the generation of anti-Stokes photoluminescence. Our study could result in efficient laser cooling of semiconductors.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Suvranta K. Tripathy, Yujie J. Ding, and Jacob B. Khurgin "Anti-Stokes photoluminescence in GaN single crystals and heterostructures", Proc. SPIE 7228, Laser Refrigeration of Solids II, 722807 (9 February 2009); https://doi.org/10.1117/12.807227
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