Highly reliable high speed 1.1um-InGaAs/GaAsP-VCSELs

H. Hatakeyama; T. Anan; T. Akagawa; K. Fukatsu; N. Suzuki; K. Tokutome; M. Tsuji

doi:10.1117/12.808717

6 February 2009 Highly reliable high speed 1.1μm-InGaAs/GaAsP-VCSELs

H. Hatakeyama, T. Anan, T. Akagawa, K. Fukatsu, N. Suzuki, K. Tokutome, M. Tsuji

Proceedings Volume 7229, Vertical-Cavity Surface-Emitting Lasers XIII; 722902 (2009) https://doi.org/10.1117/12.808717
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

In this paper, we describe high temperature operation of high speed 1.1μm-range oxide-confined vertical-cavity surfaceemitting lasers (VCSELs) for optical interconnection applications. For achieving high speed of over 25 Gbit/s under a high temperature, we applied InGaAs/GaAsP strain-compensated multiple quantum wells (SC-MQWs) as the active layer. The developed device showed 25 Gbit/s error-free operation at 100°C. We also examined reliability of the VCSELs via accelerated life tests. The result showed extremely long MTTF lifetime of about 10 thousand hours under an ambient temperature of 150°C and a bias current of about 19 kA/cm², a reliability that either equals or surpasses that of conventional 850-nm VCSELs with 10 Gbit/s. Moreover, we revealed a typical failure mode of the device; the result of analysis indicated that the failure was caused by <110> dark line defects (DLDs) generated in the n-DBR layers under the current aperture area.

Citation Download Citation

H. Hatakeyama, T. Anan, T. Akagawa, K. Fukatsu, N. Suzuki, K. Tokutome, and M. Tsuji "Highly reliable high speed 1.1μm-InGaAs/GaAsP-VCSELs", Proc. SPIE 7229, Vertical-Cavity Surface-Emitting Lasers XIII, 722902 (6 February 2009); https://doi.org/10.1117/12.808717

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