6 February 2009 Progress in high-power high-efficiency VCSEL arrays
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We present recent results on high-power, high-efficiency two-dimensional vertical-cavity surface-emitting laser (VCSEL) arrays emitting around 808nm. Selectively oxidized, top-emitting single VCSEL emitters with 49% power conversion efficiency were developed as the basic building block of these arrays. Because of the strong GaAs absorption at the 808nm wavelength, the traditional bottom-emitting, substrate-emission configuration is not possible for large arrays that require efficient heat dissipation. The processing and packaging challenges are discussed. We demonstrate 3mm x 3mm arrays and 5mm x 5mm arrays with the GaAs substrate completely removed and mounted on diamond submounts. These arrays emit more than 50W and 120W, respectively, and exhibit a maximum powerconversion efficiency of 42%.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean-Francois Seurin, Jean-Francois Seurin, Guoyang Xu, Guoyang Xu, Viktor Khalfin, Viktor Khalfin, Alexander Miglo, Alexander Miglo, James D. Wynn, James D. Wynn, Prachi Pradhan, Prachi Pradhan, Chuni L. Ghosh, Chuni L. Ghosh, L. Arthur D'Asaro, L. Arthur D'Asaro, } "Progress in high-power high-efficiency VCSEL arrays", Proc. SPIE 7229, Vertical-Cavity Surface-Emitting Lasers XIII, 722903 (6 February 2009); doi: 10.1117/12.808294; https://doi.org/10.1117/12.808294

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