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6 February 2009 Progress in high-power high-efficiency VCSEL arrays
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We present recent results on high-power, high-efficiency two-dimensional vertical-cavity surface-emitting laser (VCSEL) arrays emitting around 808nm. Selectively oxidized, top-emitting single VCSEL emitters with 49% power conversion efficiency were developed as the basic building block of these arrays. Because of the strong GaAs absorption at the 808nm wavelength, the traditional bottom-emitting, substrate-emission configuration is not possible for large arrays that require efficient heat dissipation. The processing and packaging challenges are discussed. We demonstrate 3mm x 3mm arrays and 5mm x 5mm arrays with the GaAs substrate completely removed and mounted on diamond submounts. These arrays emit more than 50W and 120W, respectively, and exhibit a maximum powerconversion efficiency of 42%.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean-Francois Seurin, Guoyang Xu, Viktor Khalfin, Alexander Miglo, James D. Wynn, Prachi Pradhan, Chuni L. Ghosh, and L. Arthur D'Asaro "Progress in high-power high-efficiency VCSEL arrays", Proc. SPIE 7229, Vertical-Cavity Surface-Emitting Lasers XIII, 722903 (6 February 2009);

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