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6 February 2009High volume 850nm oxide VCSEL development for high bandwidth
optical data link applications
Chen Ji,1 Jingyi Wang,1 David Söderstrom,1 Kuo-Liang Chen,1 Ramana Murty,1 Mark Keever,1 Laura Giovane,1 Jeong-Ki Hwang,2 Gim-Hong Koh,2 Jason Tan,2 Jason Chu2
Directly modulated 850nm oxide VCSEL is a key enabling technology for short reach, high speed
data-communication applications. Current commercially available optical transceiver products operate at data rate
up to 10Gb/s per channel, for aggregate data rate of 70Gb/s and beyond, in the case of parallel optical data link.
High volume, low cost, over temperature optical modulation speed, spectral width, output power, thermal power
budget, large signal electrical interaction with the IC driver, and reliability are some of the key requirements
driving the 850nm oxide VCSEL development. In this paper, we discuss some of the engineering issues
investigated for developing a viable oxide VCSEL product operating at 10Gb/s per channel and higher data rate.
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Chen Ji, Jingyi Wang, David Söderstrom, Kuo-Liang Chen, Ramana Murty, Mark Keever, Laura Giovane, Jeong-Ki Hwang, Gim-Hong Koh, Jason Tan, Jason Chu, "High volume 850nm oxide VCSEL development for high bandwidth optical data link applications," Proc. SPIE 7229, Vertical-Cavity Surface-Emitting Lasers XIII, 722904 (6 February 2009); https://doi.org/10.1117/12.808349