Paper
6 February 2009 Integrated photodiodes complement the VCSEL platform
Author Affiliations +
Abstract
Many VCSEL based applications require optical feedback of the emitted light. E.g. light output monitor functions in transceivers are used to compensate for thermally induced power variation, power degradation, or even breakdown of pixels if logic for redundancy is available. In this case integrated photodiodes offer less complex assembly compared to widely used hybrid solutions, e.g. known in LC-TOSA assemblies. Especially for chip-on-board (COB) assembly and array configurations, integrated monitor diodes offer a simple and compact power monitoring possibility. For 850 nm VCSELs the integrated photodiodes can be placed between substrate and bottom-DBR, on top of the top-DBR, or inbetween the layer sequence of one DBR. Integrated intra-cavity photodiodes offer superior characteristics in terms of reduced sensitivity for spontaneously emitted light [1] and thus are very well suited for power monitoring or even endof- life (EOL) detection. We present an advanced device design for an intra-cavity photodiode and according performance data in comparison with competing approaches.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Grabherr, Philipp Gerlach, Roger King, and Roland Jäger "Integrated photodiodes complement the VCSEL platform", Proc. SPIE 7229, Vertical-Cavity Surface-Emitting Lasers XIII, 72290E (6 February 2009); https://doi.org/10.1117/12.808847
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CITATIONS
Cited by 7 scholarly publications and 3 patents.
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KEYWORDS
Vertical cavity surface emitting lasers

Photodiodes

Absorption

Diodes

Gallium arsenide

Silicon

Control systems

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