6 February 2009 Integrated photodiodes complement the VCSEL platform
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Many VCSEL based applications require optical feedback of the emitted light. E.g. light output monitor functions in transceivers are used to compensate for thermally induced power variation, power degradation, or even breakdown of pixels if logic for redundancy is available. In this case integrated photodiodes offer less complex assembly compared to widely used hybrid solutions, e.g. known in LC-TOSA assemblies. Especially for chip-on-board (COB) assembly and array configurations, integrated monitor diodes offer a simple and compact power monitoring possibility. For 850 nm VCSELs the integrated photodiodes can be placed between substrate and bottom-DBR, on top of the top-DBR, or inbetween the layer sequence of one DBR. Integrated intra-cavity photodiodes offer superior characteristics in terms of reduced sensitivity for spontaneously emitted light [1] and thus are very well suited for power monitoring or even endof- life (EOL) detection. We present an advanced device design for an intra-cavity photodiode and according performance data in comparison with competing approaches.
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Martin Grabherr, Martin Grabherr, Philipp Gerlach, Philipp Gerlach, Roger King, Roger King, Roland Jäger, Roland Jäger, } "Integrated photodiodes complement the VCSEL platform", Proc. SPIE 7229, Vertical-Cavity Surface-Emitting Lasers XIII, 72290E (6 February 2009); doi: 10.1117/12.808847; https://doi.org/10.1117/12.808847


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