Semiconductor Light Sources Fabricated By Vapor Phase Epitaxial Regrowth

W. Powazinik; R. Olshansky; E. Meland; R. B. Lauer

doi:10.1117/12.937698

14 January 1987 Semiconductor Light Sources Fabricated By Vapor Phase Epitaxial Regrowth

W. Powazinik, R. Olshansky, E. Meland, R. B. Lauer

Proceedings Volume 0723, Progress in Semiconductor Laser Diodes; (1987) https://doi.org/10.1117/12.937698
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States

Abstract

An extremely versatile technique for the fabrication of semiconductor light sources is described. The technique, which is based on the halide vapor phase regrowth (VPR) of InP on channeled and selectively etched InGaAsP/InP double heterostructure material, results in an buried heterostructure (BH) index-guided VPR-BH diode laser structure which can be optimized for a number of different types of semiconductor light sources. The conditions and parameters associated with the halide VPR process are given, and the properties of the regrown InP are reported. The processing and characterization of high-frequency lasers with 18-GHz bandwidths and high-power lasers with cw single-spatial-mode powers of 60 mW are described. Additionally, the fabrication and characterization of superluminescent LEDs based on this basic VPR-BH structure are described. These LEDs are capable of coupling more than 80 μW of optical power into a single-mode fiber at 100 mA, and can couple as much as 8µW of optical power into a single-mode fiber at drive currents as low as 20 mA.

Citation Download Citation

W. Powazinik, R. Olshansky, E. Meland, and R. B. Lauer "Semiconductor Light Sources Fabricated By Vapor Phase Epitaxial Regrowth", Proc. SPIE 0723, Progress in Semiconductor Laser Diodes, (14 January 1987); https://doi.org/10.1117/12.937698

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