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3 February 2009 Ultraviolet laser diodes on sapphire and AlN substrates
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The performance characteristics of InAlGaN multiple quantum well (MQW) lasers grown on sapphire and low defect density bulk AlN substrates has been compared. The group III-nitride laser heterostructures were grown on (0001) AlN and c-plane sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Lasing was observed for optically pumped AlGaInN heterostructures in the wavelength range between 333 nm and 310 nm. A comparison of laser thresholds shows reduced threshold power densities for lasers grown on bulk AlN with threshold densities as low as 175 kW/cm2 for lasers emitting near 330 nm.
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Michael Kneissl, Zhihong Yang, Mark Teepe, and Noble M. Johnson "Ultraviolet laser diodes on sapphire and AlN substrates", Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72300E (3 February 2009);

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