Impact of filamentation on the far-field of high power broad ridge (Al,In)GaN laser diodes

Harald Braun; Stephan Rogowsky; Ulrich T. Schwarz; Stefanie Brüninghof; Alfred Lell; Uwe Strauß

doi:10.1117/12.807454

3 February 2009 Impact of filamentation on the far-field of high power broad ridge (Al,In)GaN laser diodes

Harald Braun, Stephan Rogowsky, Ulrich T. Schwarz, Stefanie Brüninghof, Alfred Lell, Uwe Strauß

Proceedings Volume 7230, Novel In-Plane Semiconductor Lasers VIII; 72300F (2009) https://doi.org/10.1117/12.807454
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

For broad ridge (Al,In)GaN laser diodes, which are inevitable for high output power applications in the near-UV to blue spectral region, filaments appear, which influence the far-field beam quality. We present an extensive study of the optical mode profile of conventional c-plane LD test structures with ridge widths from 1.5 to 10 micrometers. The broad ridge samples are optimized to reach several hundred milliwatt of cw output power. Spectral and spatial resolved near- and far-field measurements show, that the characteristic lateral multi-lobed far-field pattern can be interpreted as superposition of interfering phase-locked filaments in the ridge waveguide.

Citation Download Citation

Harald Braun, Stephan Rogowsky, Ulrich T. Schwarz, Stefanie Brüninghof, Alfred Lell, and Uwe Strauß "Impact of filamentation on the far-field of high power broad ridge (Al,In)GaN laser diodes", Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72300F (3 February 2009); https://doi.org/10.1117/12.807454

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