3 February 2009 Staggered InGaN quantum well diode lasers emitting at 500 nm
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Abstract
Staggered InGaN quantum wells (QWs) are analyzed as gain media for laser diodes to extend the lasing wavelength towards 500 nm. The calculation of band structure is based on a 6-band k•p method taking into account the valence band mixing, strain effect, and spontaneous and piezoelectric polarizations as well as the carrier screening effect. Staggered InGaN QWs with two-layer and three-layer step-function like In-content InGaN QWs structures are investigated to enhance the optical gain for laser diodes emitting in the green regime.
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Hongping Zhao, Ronald A. Arif, Nelson Tansu, "Staggered InGaN quantum well diode lasers emitting at 500 nm", Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72300G (3 February 2009); doi: 10.1117/12.808561; https://doi.org/10.1117/12.808561
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