3 February 2009 Multi-purpose InGaAsP buried heterostructure laser diodes for uncooled digital, analog, and wireless applications grown by molecular beam epitaxy and metal-organic chemical-vapor deposition
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Abstract
Using a combination of molecular beam epitaxy (MBE) and metal-organic, chemical-vapor deposition (MOCVD), highperformance, buried-heterostructure, distributed feedback (DFB), laser diodes are being manufactured for multiple, uncooled (-20 to 85 °C and -40 to 95 °C) product lines. MBE is used to grow the active regions and the p-type cladding layers, while MOCVD is used for the Fe-doped blocking layers. Multi-wafer growths are used to reduce device costs. Devices, employing the same basic active region design, have been fabricated operating at wavelengths from 1490 to 1610 nm for applications including coarse wavelength division multiplexing (CWDM) OC-48 digital, analog return path, and 2.2 GHz (3G) wireless code division multiple access (W-CDMA). These devices show good linearity (analog return path and wireless) and high-speed operation (digital). Accelerated lifetime testing of these devices shows excellent reliability with a median lifetime of 17 years at 90 °C.
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G. W. Pickrell, H. L. Zhang, H. W. Ren, D. Zhang, Q. Xue, J. Um, H. C. Lin, K. A. Anselm, T. Makino, W. Y. Hwang, "Multi-purpose InGaAsP buried heterostructure laser diodes for uncooled digital, analog, and wireless applications grown by molecular beam epitaxy and metal-organic chemical-vapor deposition", Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72300O (3 February 2009); doi: 10.1117/12.807773; https://doi.org/10.1117/12.807773
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