3 February 2009 High-power DBR laser diodes grown in a single epitaxial step
Author Affiliations +
Proceedings Volume 7230, Novel In-Plane Semiconductor Lasers VIII; 72301F (2009); doi: 10.1117/12.807872
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States
Spectral and output power data of distributed Bragg reflector lasers emitting in the technologically important wavelength range from 780 nm to 1083 nm are presented. These devices are fabricated in a single molecular beam epitaxy growth step, and the gratings are defined by holographic interferometry. Spectral dependencies on the grating and gain section lengths are systematically investigated. Experimental data for the side-mode suppression ratio, mode spacing, and thermal wavelength shift are given for devices emitting in the near infrared wavelength range between 780 nm and 1083 nm.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Linglin Jiang, Martin Achtenhagen, Nuditha V. Amarasinghe, Preston Young, Gary Evans, "High-power DBR laser diodes grown in a single epitaxial step", Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72301F (3 February 2009); doi: 10.1117/12.807872; https://doi.org/10.1117/12.807872


Back to Top