3 February 2009 High-power DBR laser diodes grown in a single epitaxial step
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Spectral and output power data of distributed Bragg reflector lasers emitting in the technologically important wavelength range from 780 nm to 1083 nm are presented. These devices are fabricated in a single molecular beam epitaxy growth step, and the gratings are defined by holographic interferometry. Spectral dependencies on the grating and gain section lengths are systematically investigated. Experimental data for the side-mode suppression ratio, mode spacing, and thermal wavelength shift are given for devices emitting in the near infrared wavelength range between 780 nm and 1083 nm.
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Linglin Jiang, Linglin Jiang, Martin Achtenhagen, Martin Achtenhagen, Nuditha V. Amarasinghe, Nuditha V. Amarasinghe, Preston Young, Preston Young, Gary Evans, Gary Evans, } "High-power DBR laser diodes grown in a single epitaxial step", Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72301F (3 February 2009); doi: 10.1117/12.807872; https://doi.org/10.1117/12.807872

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