3 February 2009 MOVPE growth for UV-LEDs
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Abstract
Challenges for the MOVPE growth of LED heterostructures for emission in the UV-A and UV-B spectral range are discussed. Special attention is given to the effects of strain in the In(Al)GaN active region as well as in the complete layer stack. Here in-situ monitoring of wafer bowing is shown to be an important tool for optimization of the growth sequence. We will compare different buffer layer technologies, in particular GaN/sapphire for LEDs emitting at 380 nm and AlN/AlGaN buffer for shorter wavelength LEDs. By increasing the aluminum content in the InAlGaN multiplequantum- well active region and by optimizing the composition and doping profile of the electron blocking layers UV LEDs with emission wavelength between 380 nm and 318 nm are demonstrated.
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Arne Knauer, Frank Brunner, Tim Kolbe, Viola Küller, Hernan Rodriguez, Sven Einfeldt, Markus Weyers, Michael Kneissl, "MOVPE growth for UV-LEDs", Proc. SPIE 7231, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII, 72310G (3 February 2009); doi: 10.1117/12.816927; https://doi.org/10.1117/12.816927
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