3 February 2009 MOVPE growth for UV-LEDs
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Challenges for the MOVPE growth of LED heterostructures for emission in the UV-A and UV-B spectral range are discussed. Special attention is given to the effects of strain in the In(Al)GaN active region as well as in the complete layer stack. Here in-situ monitoring of wafer bowing is shown to be an important tool for optimization of the growth sequence. We will compare different buffer layer technologies, in particular GaN/sapphire for LEDs emitting at 380 nm and AlN/AlGaN buffer for shorter wavelength LEDs. By increasing the aluminum content in the InAlGaN multiplequantum- well active region and by optimizing the composition and doping profile of the electron blocking layers UV LEDs with emission wavelength between 380 nm and 318 nm are demonstrated.
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Arne Knauer, Arne Knauer, Frank Brunner, Frank Brunner, Tim Kolbe, Tim Kolbe, Viola Küller, Viola Küller, Hernan Rodriguez, Hernan Rodriguez, Sven Einfeldt, Sven Einfeldt, Markus Weyers, Markus Weyers, Michael Kneissl, Michael Kneissl, "MOVPE growth for UV-LEDs", Proc. SPIE 7231, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII, 72310G (3 February 2009); doi: 10.1117/12.816927; https://doi.org/10.1117/12.816927

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