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3 February 2009 Photoluminescence mapping as a tool to improve LED production
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Abstract
Photoluminescence (PL) technique has demonstrated the powerful capability for practical application to wafer inspections in III-V compound semiconductor production. This paper describes the principle and the physics behind the variation of PL wavelength with laser excitation power density. We discuss the effect of GaN cap thickness on the PL measurements. This is especially relevant to LED manufacturers where thick GaN caps are commonly used and to PL metrology of InGaN MQW laser structures. A methodology was proposed to select the most appropriate laser and set of excitation conditions to achieve matching between PL and electroluminescence (EL) wavelengths for common Blue and Green LED structures.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhiqiang Li and Thomas Ryan "Photoluminescence mapping as a tool to improve LED production", Proc. SPIE 7231, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII, 72310P (3 February 2009); https://doi.org/10.1117/12.814665
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