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3 February 2009 GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE
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The issues and challenges of growing GaN-based structures on large area Si substrates have been studied. These include Si slip resulting from large temperature non-uniformities and cracking due to differential thermal expansion. Using an AlN nucleation layer in conjunction with an AlGaN buffer layer for stress management, and together with the interactive use of real time in-situ optical monitoring it was possible to realise flat, crack-free and uniform GaN and LED structures on 6-inch Si (111) substrates. The EL performance of processed LED devices was also studied on-wafer, giving good EL characteristics including a forward bias voltage of ~3.5 V at 20 mA from a 500 μm x 500 μm device.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Zhu, C. McAleese, K. K. McLaughlin, M. Häberlen, C. O. Salcianu, E. J. Thrush, M. J. Kappers, W. A. Phillips, P. Lane, D. J. Wallis, T. Martin, M. Astles, S. Thomas, A. Pakes, M. Heuken, and C. J. Humphreys "GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE", Proc. SPIE 7231, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII, 723118 (3 February 2009);

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