Translator Disclaimer
3 February 2009 Development of new substrate technologies for GaN LEDs: atomic layer deposition transition layers on silicon and ZnO
Author Affiliations +
Abstract
Al2O3 layers have been deposited by atomic layer deposition (ALD) on both silicon and zinc oxide (ZnO) substrates as a transition layer for MOCVD growth of GaN. These Al2O3 layers have been shown to reduce tensile strain and cracking in GaN thin films on Si, and they have also been shown to help suppress impurity diffusion from the ZnO substrate into the GaN layers. Surface morphology of the ALD-grown layers was investigated using scanning electron microscopy (SEM), and structural properties were studied using high resolution x-ray diffraction (HR-XRD). GaN thin films were then grown on these layers to determine the effects of the Al2O3 layer on subsequent GaN quality. The optical and structural properties of these films were studied, as well as surface morphology. GaN layers grown using the Al2O3 layers on Si in particular exhibit structural and optical properties approaching those of typical GaN thin films on sapphire, which shows significant promise for high performance GaN-based devices on Si substrates.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. E. Fenwick, N. Li, M. Jamil, T. Xu, A. Melton, S. Wang, H. Yu, A. Valencia, J. Nause, C. Summers, and I. T. Ferguson "Development of new substrate technologies for GaN LEDs: atomic layer deposition transition layers on silicon and ZnO", Proc. SPIE 7231, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII, 723119 (3 February 2009); https://doi.org/10.1117/12.815324
PROCEEDINGS
9 PAGES


SHARE
Advertisement
Advertisement
Back to Top