19 January 2009 Very-large-area CCD image sensors: concept and cost-effective research
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A new-generation full-frame 36x48 mm2 48Mp CCD image sensor with vertical anti-blooming for professional digital still camera applications is developed by means of the so-called building block concept. The 48Mp devices are formed by stitching 1kx1k building blocks with 6.0 µm pixel pitch in 6x8 (hxv) format. This concept allows us to design four large-area (48Mp) and sixty-two basic (1Mp) devices per 6" wafer. The basic image sensor is relatively small in order to obtain data from many devices. Evaluation of the basic parameters such as the image pixel and on-chip amplifier provides us statistical data using a limited number of wafers. Whereas the large-area devices are evaluated for aspects typical to large-sensor operation and performance, such as the charge transport efficiency. Combined with the usability of multi-layer reticles, the sensor development is cost effective for prototyping. Optimisation of the sensor design and technology has resulted in a pixel charge capacity of 58 ke- and significantly reduced readout noise (12 electrons at 25 MHz pixel rate, after CDS). Hence, a dynamic range of 73 dB is obtained. Microlens and stack optimisation resulted in an excellent angular response that meets with the wide-angle photography demands.
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E. W. Bogaart, E. W. Bogaart, I. M. Peters, I. M. Peters, A. C. Kleimann, A. C. Kleimann, E.J. P. Manoury, E.J. P. Manoury, W Klaassens, W Klaassens, W.T.F.M. de Laat, W.T.F.M. de Laat, C. Draijer, C. Draijer, R. Frost, R. Frost, J. T. Bosiers, J. T. Bosiers, } "Very-large-area CCD image sensors: concept and cost-effective research", Proc. SPIE 7250, Digital Photography V, 725003 (19 January 2009); doi: 10.1117/12.807540; https://doi.org/10.1117/12.807540

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