Paper
30 December 2008 Oriented graphene films for use as high-performance thermal and electrical interconnects
Ali Moafi, Kevin Wong, Desmond Lau, Jim G. Partridge, Dougal G. McCulloch
Author Affiliations +
Proceedings Volume 7267, Smart Materials V; 726714 (2008) https://doi.org/10.1117/12.815405
Event: SPIE Smart Materials, Nano- and Micro-Smart Systems, 2008, Melbourne, Australia
Abstract
Carbon thin films can be prepared with properties that make them suitable for applications in electronics including heat sinks, electrical interconnects transistors and chemical sensors. In this work, we examine the microstructure and normalised through film electrical resistance of oriented and non-oriented carbon films deposited onto silicon substrates at room temperature using a Filtered Cathodic Vacuum Arc (FCVA). Electrical measurements have also been performed on carbon films which were lithographically patterned to produce test structures resembling vertical interconnects. Twopoint, through-film current-voltage measurements of NiCr/Carbon/Si structures showed that the electrical resistance of the carbon films could be varied by several orders of magnitude simply by selecting different substrate bias voltages. Importantly, carbon films composed of vertically aligned graphene sheets were found to provide low resistance, linear current-voltage characteristics, indicating the formation of Ohmic junctions at the NiCr and Si interfaces of the NiCr/Carbon/Si structure.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ali Moafi, Kevin Wong, Desmond Lau, Jim G. Partridge, and Dougal G. McCulloch "Oriented graphene films for use as high-performance thermal and electrical interconnects", Proc. SPIE 7267, Smart Materials V, 726714 (30 December 2008); https://doi.org/10.1117/12.815405
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KEYWORDS
Carbon

Graphene

Resistance

Silicon

Silicon films

Ions

Silicon carbide

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