30 December 2008 Pt/anodized TiO2/SiC-based MOS device for hydrocarbon sensing
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Abstract
Pt/anodized TiO2/SiC based metal-oxide-semiconductor (MOS) devices were fabricated and characterized for their sensitivity towards propene (C3H6). Titanium (Ti) thin films were deposited onto the SiC substrates using a filtered cathodic vacuum arc (FCVA) method. Fluoride ions containing neutral electrolyte (0.5 wt% NH4F in ethylene glycol) were used to anodize the Ti films. The anodized films were subsequently annealed at 600 °C for 4 hrs in an oxygen rich environment to obtain TiO2. The current-voltage (I-V) characteristics of the Pt/TiO2/SiC devices were measured in different concentrations of propene. Exposure to the analyte gas caused a change in the Schottky barrier height and hence a lateral shift in the I-V characteristics. The effective change in the barrier height for 1% propene was calculated as 32.8 meV at 620°C. The dynamic response of the sensors was also investigated and a voltage shift of 157 mV was measured at 620°C during exposure to 1% propene.
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M. Shafiei, A. Z. Sadek, Jerry C. W. Yu, R. Arsat, K. Kalantar-Zadeh, X. F. Yu, J. G. Partridge, W. Wlodarski, "Pt/anodized TiO2/SiC-based MOS device for hydrocarbon sensing", Proc. SPIE 7268, Smart Structures, Devices, and Systems IV, 72680K (30 December 2008); doi: 10.1117/12.810108; https://doi.org/10.1117/12.810108
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