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30 December 2008 Pt/ZnO/SiC thin film for hydrogen gas sensing
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Abstract
Zinc oxide (ZnO) is one of the most promising electronic and photonic materials to date. In this work, we present an enhanced ZnO Schottky gas sensor deposited on SiC substrates in comparison to those reported previously in literature. The performance of ZnO/SiC based Schottky thin film gas sensors produced a forward lateral voltage shift of 12.99mV and 111.87mV in response to concentrations of hydrogen gas at 0.06% and 1% in air at optimum temperature of 330 ºC. The maximum change in barrier height was calculated as 37.9 meV for 1% H2 sensing operation at the optimum temperature.
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Jerry C. W. Yu, Mahnaz Shafiei, Christopher Ling, Wojtek B. Wlodarski, and Kourosh Kalantar-Zadeh "Pt/ZnO/SiC thin film for hydrogen gas sensing", Proc. SPIE 7268, Smart Structures, Devices, and Systems IV, 72680L (30 December 2008); https://doi.org/10.1117/12.810586
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