30 December 2008 Transparency conversion mechanism and laser induced fast response of bimetallic Bi/In thin film
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Abstract
Transparency conversion mechanism and laser induced fast response velocity of bimetallic Bi/In thin film is studied. Heat-treatment and laser exposure with different pulse width induced transparency is investigated by using ultraviolet-visible (UV-VIS) spectrometer, X-ray diffraction (XRD), Auger Electron Scan (AES), microscope and field emission scanning electron microscopy (FESEM). Research results show that oxidation is regarded as the reason for heat treated and long-pulsed laser exposure induced transparency conversion. Laser ablation is demonstrated to be the main reason for short-pulsed (~7ns) laser induced transparency conversion. For Bi/In thin film covered with a protection layer of (ZnS)0.85(SiO2)0.15 thin film, it exhibit fast response as fast as less than 100ns. The conclusions contribute to understanding and development of materials for thermal resist, photomask, optical storage medium and transparent conductive oxide with better performance.
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Sihai Cao, Chuanfei Guo, Yongsheng Wang, Junjie Miao, Zhuwei Zhang, and Qian Liu "Transparency conversion mechanism and laser induced fast response of bimetallic Bi/In thin film", Proc. SPIE 7269, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems IV, 726910 (30 December 2008); doi: 10.1117/12.810615; https://doi.org/10.1117/12.810615
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