17 March 2009 Laser-produced plasma source development for EUV lithography
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Abstract
We are developing a CO2 laser driven Tin plasma EUV source for HVM EUVL. This approach enables cost-effective EUV power scaling by high-conversion efficiency and full recovery of Tin fuel. The RF-excited, multi 10 kW average power pulsed CO2 laser system is a MOPA (master oscillator power amplifier) configuration and operates at 100 kHz with 20 ns pulse width. The EUV light source is scalable to in-band 200 W IF power with a single 20-kW CO2 laser beam. EUV chamber is kept uncontaminated by using a small size droplet target and effective Tin exhaust by magnetic plasma guiding. Characterization of the plasma flow in uniform magnetic field was studied by monitoring the motion of Tin plasma stream in a large vacuum chamber, depending on the magnetic flux up to 2 T. Topics relevant for HVM source is reported on continuous operation and Tin vapor evacuation.
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Akira Endo, Akira Endo, Hiroshi Komori, Hiroshi Komori, Yoshifumi Ueno, Yoshifumi Ueno, Krzysztof M. Nowak, Krzysztof M. Nowak, Yabu Takayuki, Yabu Takayuki, Yanagida Tatsuya, Yanagida Tatsuya, Takashi Suganuma, Takashi Suganuma, Takeshi Asayama, Takeshi Asayama, Hiroshi Someya, Hiroshi Someya, Hideo Hoshino, Hideo Hoshino, Masaki Nakano, Masaki Nakano, Masato Moriya, Masato Moriya, Toshihiro Nishisaka, Toshihiro Nishisaka, Tamotsu Abe, Tamotsu Abe, Akira Sumitani, Akira Sumitani, Hitoshi Nagano, Hitoshi Nagano, Youichi Sasaki, Youichi Sasaki, Shinji Nagai, Shinji Nagai, Yukio Watanabe, Yukio Watanabe, Georg Soumagne, Georg Soumagne, Takanobu Ishihara, Takanobu Ishihara, Osamu Wakabayashi, Osamu Wakabayashi, Kouji Kakizaki, Kouji Kakizaki, Hakaru Mizoguchi, Hakaru Mizoguchi, "Laser-produced plasma source development for EUV lithography", Proc. SPIE 7271, Alternative Lithographic Technologies, 727108 (17 March 2009); doi: 10.1117/12.813639; https://doi.org/10.1117/12.813639
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