18 March 2009 Compensation of overlay errors due to mask bending and non-flatness for EUV masks
Author Affiliations +
Proceedings Volume 7271, Alternative Lithographic Technologies; 72710G (2009); doi: 10.1117/12.814428
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States
Abstract
EUV blank non-flatness results in both out of plane distortion (OPD) and in-plane distortion (IPD) [3-5]. Even for extremely flat masks (~50 nm peak to valley (PV)), the overlay error is estimated to be greater than the allocation in the overlay budget. In addition, due to multilayer and other thin film induced stresses, EUV masks have severe bow (~1 um PV). Since there is no electrostatic chuck to flatten the mask during the e-beam write step, EUV masks are written in a bent state that can result in ~15 nm of overlay error. In this article we present the use of physically-based models of mask bending and non-flatness induced overlay errors, to compensate for pattern placement of EUV masks during the e-beam write step in a process we refer to as E-beam Writer based Overlay error Correction (EWOC). This work could result in less restrictive tolerances for the mask blank non-flatness specs which in turn would result in less blank defects.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manish Chandhok, Sanjay Goyal, Steven Carson, Seh-Jin Park, Guojing Zhang, Alan M. Myers, Michael L. Leeson, Marilyn Kamna, Fabian C. Martinez, Alan R. Stivers, Gian F. Lorusso, Jan Hermans, Eric Hendrickx, Sanjay Govindjee, Gerd Brandstetter, Tod Laursen, "Compensation of overlay errors due to mask bending and non-flatness for EUV masks", Proc. SPIE 7271, Alternative Lithographic Technologies, 72710G (18 March 2009); doi: 10.1117/12.814428; https://doi.org/10.1117/12.814428
PROCEEDINGS
12 PAGES


SHARE
KEYWORDS
Extreme ultraviolet

Photomasks

Finite element methods

Reticles

Error analysis

Photovoltaics

Thin films

Back to Top