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17 March 2009 Estimation of cost comparison of lithography technologies at the 22-nm half-pitch node
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Abstract
The cost of ownership (CoO) of candidate technologies for 22 nm half-pitch lithography is calculated. To more accurately compare technologies with different numbers of process steps, a model that includes deposition, etching, metrology, and other costs is created. For 22 nm half-pitch nodes, extreme ultraviolet lithography (EUVL) has a significant cost advantage over other technologies under certain mask cost assumptions. Double patterning, however, may be competitive under worst-case EUVL mask cost assumptions. Sensitivity studies of EUVL CoO to throughput and uptime show EUVL may be cost-competitive at lower uptime and throughput conditions. Finally, calculation of the CoO of 450 mm lithography shows that the expected cost reduction is between 0% and 15%.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrea Wüest, Andrew J. Hazelton, and Greg Hughes "Estimation of cost comparison of lithography technologies at the 22-nm half-pitch node", Proc. SPIE 7271, Alternative Lithographic Technologies, 72710Y (17 March 2009); doi: 10.1117/12.814255; https://doi.org/10.1117/12.814255
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