Carbon film growth on model electron-irradiated MLM cap layer: interaction of benzene and MMA vapor with TiO2 surface

B. V. Yakshinskiy; S. Zalkind; R. A. Bartynski; R. Caudillo; T. E. Madey

doi:10.1117/12.814385

17 March 2009 Carbon film growth on model electron-irradiated MLM cap layer: interaction of benzene and MMA vapor with TiO₂ surface

B. V. Yakshinskiy, S. Zalkind, R. A. Bartynski, R. Caudillo, T. E. Madey

Author Affiliations +

Proceedings Volume 7271, Alternative Lithographic Technologies; 727110 (2009) https://doi.org/10.1117/12.814385
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Our aim is to characterize the surface processes that affect the reflectivity of TiO₂ - capped multilayer mirrors used in EUV lithography. Low energy electron beam is employed to mimic excitations initiated by EUV radiation. Temperature programmed desorption (TPD), x-ray photoelectron spectroscopy (XPS), and low energy ion scattering (LEIS) are used to analyze the surface reactions. Carbon film growth on the TiO₂ (011) crystalline surface is measured during 10 to 100 eV electron bombardment in benzene or methyl methacrylate (MMA) vapor over a wide range of pressures and temperatures near 300 K. Low energy secondary electrons excited by EUV photons contribute substantially to carbon accumulation on clean TiO₂ cap layers. For benzene on clean TiO₂ secondary electron effects dominate in the initial stages of carbon accumulation, whereas for C-covered TiO₂, direct photoexcitations appear to dominate. The adsorption energy, the steady-state coverage of the molecules on the surface and the cross-sections for electron-stimulated dissociation are key parameters for understanding and modeling the processes on the EUVL mirrors.

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B. V. Yakshinskiy, S. Zalkind, R. A. Bartynski, R. Caudillo, and T. E. Madey "Carbon film growth on model electron-irradiated MLM cap layer: interaction of benzene and MMA vapor with TiO₂ surface", Proc. SPIE 7271, Alternative Lithographic Technologies, 727110 (17 March 2009); https://doi.org/10.1117/12.814385

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