18 March 2009 Mask diffraction analysis and optimization for EUV masks
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Abstract
This paper employs a direct analysis of the intensity and the phase of the diffracted light by rigorous electromagnetic field (EMF) simulations to investigate mask-induced imaging artifacts in EUV-lithography. Analysis of the diffraction efficiencies and phase differences between the diffraction orders versus mask and illumination parameters is used to explore EUV-specific imaging artifacts such as feature orientation dependent placement errors and feature sizes, shifts of the best focus position, process window asymmetries, and other aberration-like phenomena. The results of these simulations aim to understand the reason for these EUV-specific imaging artifacts and to devise strategies for their compensation. Finally, rigorous EMF models of light scattering from EUV-masks are applied to identify ideal mask absorber stacks using global optimization techniques.
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Andreas Erdmann, Andreas Erdmann, Peter Evanschitzky, Peter Evanschitzky, Tim Fühner, Tim Fühner, } "Mask diffraction analysis and optimization for EUV masks", Proc. SPIE 7271, Alternative Lithographic Technologies, 72711E (18 March 2009); doi: 10.1117/12.814119; https://doi.org/10.1117/12.814119
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