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17 March 2009 Automated imprint mask cleaning for step-and-flash imprint lithography
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Abstract
Step-and-Flash Imprint Lithography (S-FIL) is a promising lithography strategy for semiconductor manufacturing at device nodes below 32nm. The S-FIL 1:1 pattern transfer technology utilizes a field-by-field ink jet dispense of a low viscosity liquid resist to fill the relief pattern of the device layer etched into the glass mask. Compared to other sub 40nm CD lithography methods, the resulting high resolution, high throughput through clustering, 3D patterning capability, low process complexity, and low cost of ownership (CoO) of S-FIL makes it a widely accepted technology for patterned media as well as a promising mainstream option for future CMOS applications. Preservation of mask cleanliness is essential to avoid risk of repeated printing of defects. The development of mask cleaning processes capable of removing particles adhered to the mask surface without damaging the mask is critical to meet high volume manufacturing requirements. In this paper we have presented various methods of residual (cross-linked) resist removal and final imprint mask cleaning demonstrated on the HamaTech MaskTrack automated mask cleaning system. Conventional and non-conventional (acid free) methods of particle removal have been compared and the effect of mask cleaning on pattern damage and CD integrity is also studied.
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Sherjang Singh, Ssuwei Chen, Kosta Selinidis, Brian Fletcher, Ian McMackin, Ecron Thompson, Douglas J. Resnick, Peter Dress, and Uwe Dietze "Automated imprint mask cleaning for step-and-flash imprint lithography", Proc. SPIE 7271, Alternative Lithographic Technologies, 72712H (17 March 2009); https://doi.org/10.1117/12.814290
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