17 March 2009 Optimization of droplets for UV-NIL using coarse-grain simulation of resist flow
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A mathematical model and numerical method are described, which make it possible to simulate ultraviolet ("step and flash") nanoimprint lithography (UV-NIL) process adequately even using standard Personal Computers. The model is derived from 3D Navier-Stokes equations with the understanding that the resist motion is largely directed along the substrate surface and characterized by ultra-low values of the Reynolds number. By the numerical approximation of the model, a special finite difference method is applied (a coarse-grain method). A coarse-grain modeling tool for detailed analysis of resist spreading in UV-NIL at the structure-scale level is tested. The obtained results demonstrate the high ability of the tool to calculate optimal dispensing for given stamp design and process parameters. This dispensing provides uniform filled areas and a homogeneous residual layer thickness in UV-NIL.
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Vadim Sirotkin, Vadim Sirotkin, Alexander Svintsov, Alexander Svintsov, Sergey Zaitsev, Sergey Zaitsev, } "Optimization of droplets for UV-NIL using coarse-grain simulation of resist flow", Proc. SPIE 7271, Alternative Lithographic Technologies, 72712I (17 March 2009); doi: 10.1117/12.813959; https://doi.org/10.1117/12.813959

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