Sub-30-nm resolution parallel EB lithography based on a planar type Si nanowire array ballistic electron source

A. Kojima; H. Ohyi; N. Koshida

doi:10.1117/12.812933

18 March 2009 Sub-30-nm resolution parallel EB lithography based on a planar type Si nanowire array ballistic electron source

A. Kojima, H. Ohyi, N. Koshida

Author Affiliations +

Proceedings Volume 7271, Alternative Lithographic Technologies; 72712N (2009) https://doi.org/10.1117/12.812933
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Sub-30 nm resolution parallel EB lithography based on a planar type silicon nanowire array ballistic electron emitter (PBE) is demonstrated in this paper. The Parallel EB lithography is performed on a 1:1 electron projection system. The system consists of the PBE as a surface electron source, a target wafer parallel to the electron source, and uniform vertical electromagnetic fields. The PBE contained the desired pattern and projected the patterned electron image on the target. Using the PBE, the electron projection system provides a high resolution of the parallel lithography without any serious chromatic aberrations. The PBE emits ballistic and/or quasiballistic electrons with small angle dispersion and small energy dispersion by quantum confinement effect in the PBE. As results of that, the parallel EB lithography achieved high resolution below 30nm even in a low accelerating voltage condition. The 1:1 paralell EB lithography system based on the PBE provides next generation device fabrication technique.

Citation Download Citation

A. Kojima, H. Ohyi, and N. Koshida "Sub-30-nm resolution parallel EB lithography based on a planar type Si nanowire array ballistic electron source", Proc. SPIE 7271, Alternative Lithographic Technologies, 72712N (18 March 2009); https://doi.org/10.1117/12.812933

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