18 March 2009 Proximity effect correction for 20nm dimension patterning
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Electron Beam Direct Writing (EBDW) has been applied to various applications such as prototyping or small amount production of electronic devices. Originally, proximity effect in EBDW is considered as the problem of the background energy difference caused by the pattern density distribution. However, the critical dimensions of target patterns are getting smaller, we cannot ignore influences of the forward scattering. Theoretically, when the critical dimension is close to 3 or 4 times of forward scattering range, influence cannot be ignored. For example, in case of that corresponds, fabricating 20 nm dimension patterns by Nano Imprint Lithography (NIL) which is significant candidate of next generation lithography technology. Because it requires original dimension (1:1) mold. Therefore proximity effect correction (PEC) system which considers the forward scattering must be important. We developed simulation-based proximity effect correction system combined with data format conversion, works on Linux PC cluster. And we exposed the patterns which are dose compensated by this system. Firstly, we have speculated parameters about backward scattering parameters by exposing 100 nm line and space patterns. We got following parameters, beta (backward scattering range) = 32 um, eta (backward scattering coefficient) = 2.5. Secondary, we have exposed Line and Space patterns whose dimensions are from 20 nm to 100 nm. We found that smaller and dense patterns have trend to be over exposed and bigger. Experimental specification is following, EB Direct Writing system is JBX-9300FS (100keV acc. Voltage) by JEOL co.ltd, (Japan) , resist is HSQ (FOx 12) by Dow Corning co. (United States), substrate is Si.
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Dai Tsunoda, Masahiro Shoji, Mitsuko Tatsugawa, Hiroyuki Tsunoe, Yusuke Iino, Piotr Jedrasik, "Proximity effect correction for 20nm dimension patterning", Proc. SPIE 7271, Alternative Lithographic Technologies, 72712S (18 March 2009); doi: 10.1117/12.813971; https://doi.org/10.1117/12.813971

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