18 March 2009 Interference assisted lithography for patterning of 1D gridded design
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Abstract
We present Interference Assisted Lithography (IAL) as a promising and cost-effective solution for extending lithography. IAL achieves a final pattern by combining an interference exposure with a trim exposure. The implementation of IAL requires that today's 2D random layouts be converted to highly regular 1D gridded designs. We show that an IAL-friendly 6T SRAM bitcell can be designed following 1D gridded design rules and that the electrical characteristics is comparable to today's 2D design. Lithography simulations confirm that the proposed bitcell can be successfully imaged with IAL.
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Robert T. Greenway, Robert T. Greenway, Rudolf Hendel, Rudolf Hendel, Kwangok Jeong, Kwangok Jeong, Andrew B. Kahng, Andrew B. Kahng, John S. Petersen, John S. Petersen, Zhilong Rao, Zhilong Rao, Michael C. Smayling, Michael C. Smayling, } "Interference assisted lithography for patterning of 1D gridded design", Proc. SPIE 7271, Alternative Lithographic Technologies, 72712U (18 March 2009); doi: 10.1117/12.812033; https://doi.org/10.1117/12.812033
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