Defect printability of thin absorber mask in EUV lithography

Takashi Kamo; Hajime Aoyama; Yukiyasu Arisawa; Toshihiko Tanaka; Osamu Suga

doi:10.1117/12.813653

18 March 2009 Defect printability of thin absorber mask in EUV lithography

Takashi Kamo, Hajime Aoyama, Yukiyasu Arisawa, Toshihiko Tanaka, Osamu Suga

Proceedings Volume 7271, Alternative Lithographic Technologies; 72713I (2009) https://doi.org/10.1117/12.813653
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

The effect of mask absorber thickness on defect printability in EUV lithography was studied. In case of very thin absorber, when used for EUVL mask, it became necessary to set specifications for mask defects for the manufacturability of ULSI devices because mask absorber thickness could impact defect printability. We prepared programmed mask defects of LR-TaBN absorber with various thicknesses. We then investigated defect printability of thin absorber mask with Small Field Exposure Tool (SFET) by comparing the data with simulation results.

Citation Download Citation

Takashi Kamo, Hajime Aoyama, Yukiyasu Arisawa, Toshihiko Tanaka, and Osamu Suga "Defect printability of thin absorber mask in EUV lithography", Proc. SPIE 7271, Alternative Lithographic Technologies, 72713I (18 March 2009); https://doi.org/10.1117/12.813653

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