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18 March 2009 Defect printability of thin absorber mask in EUV lithography
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Abstract
The effect of mask absorber thickness on defect printability in EUV lithography was studied. In case of very thin absorber, when used for EUVL mask, it became necessary to set specifications for mask defects for the manufacturability of ULSI devices because mask absorber thickness could impact defect printability. We prepared programmed mask defects of LR-TaBN absorber with various thicknesses. We then investigated defect printability of thin absorber mask with Small Field Exposure Tool (SFET) by comparing the data with simulation results.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Kamo, Hajime Aoyama, Yukiyasu Arisawa, Toshihiko Tanaka, and Osamu Suga "Defect printability of thin absorber mask in EUV lithography", Proc. SPIE 7271, Alternative Lithographic Technologies, 72713I (18 March 2009); https://doi.org/10.1117/12.813653
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