18 March 2009 Carbon contamination of extreme ultraviolet (EUV) masks and its effect on imaging
Author Affiliations +
Abstract
Carbon contamination of extreme ultraviolet (EUV) masks and its effect on imaging is a significant issue due to lowered throughput and potential effects on imaging performance. In this work, a series of carbon contamination experiments were performed on a patterned EUV mask. Contaminated features were then inspected with a reticle scanning electron microscope (SEM) and printed with the SEMATECH Berkeley Microfield-Exposure tool (MET) [1]. In addition, the mask was analyzed using the SEMATECH Berkeley Actinic-Inspection tool (AIT) [2] to determine the effect of carbon contamination on the absorbing features and printing performance. To understand the contamination topography, simulations were performed based on calculated aerial images and resist parameters. With the knowledge of the topography, simulations were then used to predict the effect of other thicknesses of the contamination layer, as well as the imaging performance on printed features.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu-Jen Fan, Yu-Jen Fan, Leonid Yankulin, Leonid Yankulin, Alin Antohe, Alin Antohe, Rashi Garg, Rashi Garg, Petros Thomas, Petros Thomas, Chimaobi Mbanaso, Chimaobi Mbanaso, Andrea Wüest, Andrea Wüest, Frank Goodwin, Frank Goodwin, Sungmin Huh, Sungmin Huh, Patrick Naulleau, Patrick Naulleau, Kenneth Goldberg, Kenneth Goldberg, Iacopo Mochi, Iacopo Mochi, Gregory Denbeaux, Gregory Denbeaux, "Carbon contamination of extreme ultraviolet (EUV) masks and its effect on imaging", Proc. SPIE 7271, Alternative Lithographic Technologies, 72713U (18 March 2009); doi: 10.1117/12.814196; https://doi.org/10.1117/12.814196
PROCEEDINGS
9 PAGES


SHARE
RELATED CONTENT


Back to Top