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18 March 2009 Improved contrast and reflectivity of multilayer reflective optics for wavelengths beyond the extreme UV
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Abstract
We present a computational and experimental study on interface passivation of B4C/La multilayers for photolithography at wavelengths beyond 13.5 nm. We successfully applied N-plasma treatment to form interface-localized BN and LaN layers, preventing LaB6 and LaC2 interlayer formation and increasing the optical contrast. Experiments suggest an improvement of absolute reflection by up to 20% for 200 period multilayers, with a best-so-far result of 41.5 % at near-normal incidence of 6.7 nm.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tim Tsarfati, Erwin Zoethout, Eric Louis, Robbert van de Kruijs, Andrey Yakshin, Stephan Müllender, and Fred Bijkerk "Improved contrast and reflectivity of multilayer reflective optics for wavelengths beyond the extreme UV", Proc. SPIE 7271, Alternative Lithographic Technologies, 72713V (18 March 2009); https://doi.org/10.1117/12.824434
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