19 March 2009 Evaluation of shadowing and flare effect for EUV tool
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Abstract
One of the major issues introduced by development of Extreme Ultra Violet Lithography (EUV) is high level of flare and shadowing introduced by the system. Effect of the high level flare degrades the aerial images and may introduce unbalanced Critical Dimension Uniformity (CDU) and so on. Also due to formation of the EUV tool, shadowing of the pattern is another concern added from EUVL. Shadowing of the pattern will cause CD variation for pattern directionality and position of the pattern along the slit. Therefore, in order to acquire high resolution wafer result, correction of the shadowing and flare effect is inevitable for EUV lithography. In this study, we will analyze the effect of shadowing and flare effect of EUV alpha demo tool at IMEC. Simulation and wafer testing will be analyzed to characterize the effect of shadowing on angle and slit position of the pattern. Also, flare of EUV tool will be plotted using Kirk's disappearing pad method and flare to pattern density will also be analyzed. Additionally, initial investigation into actual sub 30nm Technology DRAM critical layer will be performed. Finally simulation to wafer result will be analyzed for both shadowing and flare effect of EUV tool.
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James Moon, Cheol-Kyun Kim, Byoung-Sub Nam, Byoung-Ho Nam, Yoon-Suk Hyun, Suk-Kyun Kim, Chang-Moon Lim, Yong-Dae Kim, Mun-Sik Kim, Yong-Kyoo Choi, Chang-Reol Kim, Donggyu Yim, "Evaluation of shadowing and flare effect for EUV tool", Proc. SPIE 7271, Alternative Lithographic Technologies, 727144 (19 March 2009); doi: 10.1117/12.814364; https://doi.org/10.1117/12.814364
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