Metrology, Inspection, and Process Control for Microlithography XXIII

0 Sessions, 134 papers, 0 videos
Front Matter  (1)
Overlay  (5)
SEM I  (3)
SEM II  (4)
Inspection  (6)
Proceedings Volume 7272 is from: Logo
22-27 February 2009
San Jose, California, United States
Front Matter
Proc. SPIE 7272, Front Matter: Volume 7272, 727201(8 April 2009);doi: 10.1117/12.829695
Keynote Session
Proc. SPIE 7272, Improving optical measurement accuracy using multi-technique nested uncertainties, 727202(19 March 2009);doi: 10.1117/12.816569
Proc. SPIE 7272, The measurement uncertainty challenge of advanced patterning development, 727203(23 March 2009);doi: 10.1117/12.814170
Methods for Today
Proc. SPIE 7272, CD-SEM parameter influence on image resolution and measurement accuracy, 727204(23 March 2009);doi: 10.1117/12.816251
Proc. SPIE 7272, Role of CDAFM in achieving accurate OPC modeling, 727205(23 March 2009);doi: 10.1117/12.815240
Proc. SPIE 7272, Sampling for advanced overlay process control, 727206(23 March 2009);doi: 10.1117/12.813568
Proc. SPIE 7272, Simultaneous overlay and CD measurement for double patterning: scatterometry and RCWA approach, 727207(23 March 2009);doi: 10.1117/12.814706
Proc. SPIE 7272, Reference metrology in a research fab: the NIST clean calibrations thrust, 727209(23 March 2009);doi: 10.1117/12.815499
Solutions for Tomorrow
Proc. SPIE 7272, Evaluation of a new metrology technique to support the needs of accuracy, precision, speed, and sophistication in near-future lithography, 72720A(23 March 2009);doi: 10.1117/12.814860
Proc. SPIE 7272, MOSAIC: a new wavefront metrology, 72720B(23 March 2009);doi: 10.1117/12.814303
Proc. SPIE 7272, Immersion specific error contribution to overlay control, 72720D(23 March 2009);doi: 10.1117/12.814923
Proc. SPIE 7272, Overlay similarity: a new overlay index for metrology tool and scanner overlay fingerprint methodology, 72720E(23 March 2009);doi: 10.1117/12.814852
Proc. SPIE 7272, Tabletop coherent diffractive microscopy with extreme ultraviolet light from high harmonic generation, 72720F(23 March 2009);doi: 10.1117/12.814313
Proc. SPIE 7272, Overlay metrology for double patterning processes, 72720G(23 March 2009);doi: 10.1117/12.814182
Proc. SPIE 7272, Implementation of the high order overlay control for mass production of 40nm node logic devices, 72720H(23 March 2009);doi: 10.1117/12.813378
Proc. SPIE 7272, Using intrafield high-order correction to achieve overlay requirement beyond sub-40nm node, 72720I(23 March 2009);doi: 10.1117/12.813628
Proc. SPIE 7272, Polar Correction: new overlay control method for higher-order intra-field error dependent on the wafer coordinates, 72720J(23 March 2009);doi: 10.1117/12.813490
Proc. SPIE 7272, Effects of plasma spatial profile on conversion efficiency of laser produced plasma sources for EUV lithography, 72720K(24 March 2009);doi: 10.1117/12.813423
Line Edge/Width Roughness
Proc. SPIE 7272, Dark-field optical scatterometry for line-width-roughness metrology, 72720L(23 March 2009);doi: 10.1117/12.813007
Proc. SPIE 7272, A CD AFM study of the plasma impact on 193nm photoresist LWR: role of plasma UV and ions, 72720M(23 March 2009);doi: 10.1117/12.813493
Proc. SPIE 7272, SEM metrology damage in polysilicon line and its impact on LWR evaluation, 72720N(23 March 2009);doi: 10.1117/12.814920
Proc. SPIE 7272, Process variation monitoring (PVM) by wafer inspection tool as a complementary method to CD-SEM for mapping LER and defect density on production wafers, 72720O(23 March 2009);doi: 10.1117/12.814063
Proc. SPIE 7272, Validation of CD-SEM etching residue evaluation technique for MuGFET structures, 72720Q(23 March 2009);doi: 10.1117/12.813616
Proc. SPIE 7272, Sensitivity of SEM width measurements to model assumptions, 72720R(23 March 2009);doi: 10.1117/12.814300
Proc. SPIE 7272, Accurate electrical prediction of memory array through SEM-based edge-contour extraction using SPICE simulation, 72720S(23 March 2009);doi: 10.1117/12.814098
Scatterometry I
Proc. SPIE 7272, Developing an uncertainty analysis for optical scatterometry, 72720T(23 March 2009);doi: 10.1117/12.814835
Proc. SPIE 7272, Effect of line-width roughness on optical scatterometry measurements, 72720U(23 March 2009);doi: 10.1117/12.813770
Proc. SPIE 7272, Product-driven material characterization for improved scatterometry time-to-solution, 72720V(23 March 2009);doi: 10.1117/12.814380
Proc. SPIE 7272, Manufacturing implementation of scatterometry and other techniques for 300-mm lithography tool controls, 72720W(23 March 2009);doi: 10.1117/12.812287
Proc. SPIE 7272, Methodologies for evaluating CD-matching of CD-SEM, 72720Y(23 March 2009);doi: 10.1117/12.815186
Proc. SPIE 7272, Calibration of a scanning electron microscope in the wide range of magnifications for the microscope operation in the integrated circuit production line, 72720Z(23 March 2009);doi: 10.1117/12.813514
Proc. SPIE 7272, CD-SEM tool stability and tool-to-tool matching management using image sharpness monitor, 727210(23 March 2009);doi: 10.1117/12.813993
Proc. SPIE 7272, Performance verification of resist loss measurement method using top-view CD-SEM images for hyper-NA lithography, 727211(23 March 2009);doi: 10.1117/12.813472
Diffraction-Based Overlay
Proc. SPIE 7272, Diffraction-based overlay metrology for double patterning technologies, 727212(24 March 2009);doi: 10.1117/12.816590
Proc. SPIE 7272, Through-focus scanning and scatterfield optical methods for advanced overlay target analysis, 727214(23 March 2009);doi: 10.1117/12.817062
Mask Metrology
Proc. SPIE 7272, Cr migration on 193nm binary photomasks, 727215(23 March 2009);doi: 10.1117/12.813934
Proc. SPIE 7272, Compute resource management and TAT control in mask data prep, 727216(23 March 2009);doi: 10.1117/12.814236
Proc. SPIE 7272, Investigation of phase distribution using Phame in-die phase measurements, 727217(23 March 2009);doi: 10.1117/12.814132
Proc. SPIE 7272, Image library approach to evaluating parametric uncertainty in metrology of isolated feature width, 727218(23 March 2009);doi: 10.1117/12.815363
Proc. SPIE 7272, New inspection technology for hole pattern by Fourier space on hp 4x-nm generation, 727219(23 March 2009);doi: 10.1117/12.814046
Proc. SPIE 7272, Development of optical simulation tool for defect inspection, 72721A(24 March 2009);doi: 10.1117/12.812472
Proc. SPIE 7272, Phenomenology of electron-beam-induced photoresist shrinkage trends, 72721B(24 March 2009);doi: 10.1117/12.816249
Proc. SPIE 7272, Systematic defect filtering and data analysis methodology for design based metrology, 72721C(24 March 2009);doi: 10.1117/12.814373
Proc. SPIE 7272, Quantitative measurement of voltage contrast in SEM images for in-line resistance inspection of wafers manufactured for SRAM, 72721D(23 March 2009);doi: 10.1117/12.812949
Proc. SPIE 7272, Study of devices leakage of 45nm node with different SRAM layouts using an advanced e-beam inspection systems, 72721E(23 March 2009);doi: 10.1117/12.813885
Process Control
Proc. SPIE 7272, Hotspot monitoring system with contour-based metrology, 72721F(24 March 2009);doi: 10.1117/12.814022
Proc. SPIE 7272, Outliers detection by fuzzy classification method for model building, 72721G(23 March 2009);doi: 10.1117/12.812955
Proc. SPIE 7272, Monitoring measurement tools: new methods for driving continuous improvements in fleet measurement uncertainty, 72721H(24 March 2009);doi: 10.1117/12.814089
Proc. SPIE 7272, Two-dimensional dose and focus-error measurement technology for exposure tool management in half-pitch 3x generation, 72721I(23 March 2009);doi: 10.1117/12.813937
Proc. SPIE 7272, Increased uniformity control in a 45nm polysilicon gate etch process, 72721J(24 March 2009);doi: 10.1117/12.816095
Proc. SPIE 7272, The measurement uncertainty challenge for the future technological nodes production and development, 72721K(24 March 2009);doi: 10.1117/12.812446
Scatterometry II
Proc. SPIE 7272, Angle-resolved scatterfield microscope for linewidth measurement, 72721L(24 March 2009);doi: 10.1117/12.813982
Proc. SPIE 7272, Optical CD metrology model evaluation and refining for manufacturing, 72721M(24 March 2009);doi: 10.1117/12.815015
Proc. SPIE 7272, Uncertainty and sensitivity analysis and its applications in OCD measurements, 72721N(24 March 2009);doi: 10.1117/12.814363
Reference Metrology
Proc. SPIE 7272, AFM method for sidewall measurement through CNT probe deformation correction and its accuracy evaluation, 72721P(24 March 2009);doi: 10.1117/12.813375
Poster Session
Proc. SPIE 7272, Alignment method of self-aligned double patterning process, 72721Q(23 March 2009);doi: 10.1117/12.813641